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CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts APPLICATION * Power amplifier . 2SC1766PT CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 CONSTRUCTION * NPN Switching Transistor MARKING * hFE Classification P: 1766 Q: Q1766 Y: Y1766 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 50 50 5 2 2 0.4 1000 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 RATING CHARACTERISTIC CURVES ( 2SC1766PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=50V IC=0; VEB=5V VCE=2V; Note 1 IC=0.5A; Note 2 IC=2.0A IC=1A; IB=0.05A IC=1A; IB=0.05A IE=ie=0; VCB=-10V; f=1MHz IC=-0.5A; VCE=2V; f=100MHz SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 70 20 - 40 120 390 0.5 1.2 Volts mVolts pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency VCEsat VBEsat CC fT SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Turn-on Time Storage Time Fall Time IB1 IB2 INPUT CONDITION OUTPUT SYMBOL ton ts tf MIN. - TYPE 0.1 1.0 0.1 MAX. - UNITS uSec uSec uSec IB1 30 ohmS 30V 20uSec IB2 IB1=-IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(1) Classification P:82 to 180 Q: 120 to 270, Y: 180 to 390 RATING CHARACTERISTIC CURVES ( 2SC1766PT ) Typical Electrical Characteristics Figure 1. VCE - IC 1.6 1.6 Figure 2. VCE - IC COLLECTOR-EMITTER VOLTAGE VCE (V) TA=25 OC COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER COMMON EMITTER TA=100 OC 1.2 IB=5mA 10mA 20mA 1.2 IB=3mA 5mA 10mA 20mA 30mA 30mA 0.8 40mA 0.8 40mA 0.4 0.4 40mA 0 0 0.4 0.8 1.2 COLLECTOR CURRENT IC (A) 1.6 2.0 0 0 0.4 0.8 1.2 COLLECTOR CURRENT IC (A) 1.6 2.0 Figure 3. VCE - IC 1.6 1000 COMMON EMITTER Figure 4. hFE - IC COMMON EMITTER COLLECTOR-EMITTER VOLTAGE VCE (V) 1.2 IB=5mA 10mA 20mA 30mA 40mA DC CURRENT GAIN hFE TA=-55 C O 500 300 TA=100OC VCE=2V 25OC 100 -55OC 0.8 50 30 0.4 50mA 0 0 0.4 0.8 1.2 COLLECTOR CURRENT IC (A) 1.6 2.0 10 10 30 100 300 COLLECTOR CURRENT IC (mA) 1000 3000 Figure 5. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 10 Figure 6. VBE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER IC/IB=20 COMMON EMITTER 5 3 IC/IB=20 -55OC 1 25OC 0.1 TA=100OC 25OC -55OC 0.05 0.03 0.5 0.3 TA=100OC 0.01 10 30 100 300 COLLECTOR CURRENT IC (mA) 1000 3000 0.1 10 30 100 300 COLLECTOR CURRENT IC (mA) 1000 3000 RATING CHARACTERISTIC CURVES ( 2SC1766PT ) Typical Electrical Characteristics Figure 7. IC - VBE 1.6 COMMON EMITTER Figure 8. PC - TA 1.2 COLLECTOR POWER DISSIPATION PC (W) (1) 1.0 COLLECTOR CURRENT IC (A) VCE=2V (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink 1.2 TA=100 OC 25 OC -55 OC 0.8 0.8 0.6 (2) 0.4 0.4 0.2 0 0 0.5 1.0 BASE-EMITTER VBE (V) 1.5 2.0 0 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA ( OC) 140 160 Figure 9. Safe Operation Area 3000 10mS* COLLECTOR CURRENT IC (mA) 1000 500 300 100 50 30 10 5 3 1 0.1 IC max (continous) IC max (pulse)* 1S* 100mS* 1mS* DC operation TA=25OC *: Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate 0.3 1.0 3.0 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 |
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